Calculation of the Self-energy of Open Quantum Systems

We propose an easy method of calculating the self-energy of semi-infinite leads attached to a mesoscopic system.Comment: 6 pages, 2 figures, published in J. Phys. Soc. Jp

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si

Tunneling ``zero-bias'' anomaly in the quasi-ballistic regime

For the first time, we study the tunneling density of states (DOS) of the interacting electron gas beyond the diffusive limit. A strong correction to the DOS persists even at electron energies exceeding the inverse transport relaxation time, which could not be expected from the well-known Altshuler-Aronov-Lee (AAL) theory. This correction originates from the interference between the electron waves scattered by an impurity and by the Friedel oscillation this impurity creates. Account for such processes also revises the AAL formula for the DOS in the diffusive limit.Comment: 4 pages, 2 .eps figures, submitted to Phys. Rev. Let

Solar radiation on Mars: Stationary photovoltaic array

Solar energy is likely to be an important power source for surface-based operation on Mars. Photovoltaic cells offer many advantages. In this article we have presented analytical expressions and solar radiation data for stationary flat surfaces (horizontal and inclined) as a function of latitude, season and atmospheric dust load (optical depth). The diffuse component of the solar radiation on Mars can be significant, thus greatly affecting the optimal inclination angle of the photovoltaic surface

Coherent spin transport through a 350-micron-thick Silicon wafer

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500ns at 60K.Comment: Accepted in PR

Global properties of Stochastic Loewner evolution driven by Levy processes

Standard Schramm-Loewner evolution (SLE) is driven by a continuous Brownian motion which then produces a trace, a continuous fractal curve connecting the singular points of the motion. If jumps are added to the driving function, the trace branches. In a recent publication [1] we introduced a generalized SLE driven by a superposition of a Brownian motion and a fractal set of jumps (technically a stable L\'evy process). We then discussed the small-scale properties of the resulting L\'evy-SLE growth process. Here we discuss the same model, but focus on the global scaling behavior which ensues as time goes to infinity. This limiting behavior is independent of the Brownian forcing and depends upon only a single parameter, $\alpha$, which defines the shape of the stable L\'evy distribution. We learn about this behavior by studying a Fokker-Planck equation which gives the probability distribution for endpoints of the trace as a function of time. As in the short-time case previously studied, we observe that the properties of this growth process change qualitatively and singularly at $\alpha =1$. We show both analytically and numerically that the growth continues indefinitely in the vertical direction for $\alpha > 1$, goes as $\log t$ for $\alpha = 1$, and saturates for $\alpha< 1$. The probability density has two different scales corresponding to directions along and perpendicular to the boundary. In the former case, the characteristic scale is $X(t) \sim t^{1/\alpha}$. In the latter case the scale is $Y(t) \sim A + B t^{1-1/\alpha}$ for $\alpha \neq 1$, and $Y(t) \sim \ln t$ for $\alpha = 1$. Scaling functions for the probability density are given for various limiting cases.Comment: Published versio

Conduction through a quantum dot near a singlet-triplet transition

Kondo effect in the vicinity of a singlet-triplet transition in a vertical quantum dot is considered. This system is shown to map onto a special version of the two-impurity Kondo model. At any value of the control parameter, the system has a Fermi-liquid ground state. Explicit expressions for the linear conductance as a function of the control parameter and temperature $T$ are obtained. At T=0, the conductance reaches the unitary limit $\sim 4e^2/h$ at the triplet side of the transition, and decreases with the increasing distance to the transition at the singlet side. At finite temperature, the conductance exhibits a peak near the transition point

Suppression of Kondo effect in a quantum dot by external irradiation

We demonstrate that the external irradiation brings decoherence in the spin states of the quantum dot. This effect cuts off the Kondo anomaly in conductance even at zero temperature. We evaluate the dependence of the DC conductance in the Kondo regime on the power of irradiation, this dependence being determined by the decoherence.Comment: 4 pages, 1 figur